Thickness-Dependent Low Lattice Thermal Conductivity of Chemical Vapor-Deposited SnSe<sub>2</sub> Nanosheets.
basic_science · Level V
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- Record sourced from PubMed, PMID 40925321.
- Also identified by DOI 10.1021/acsnano.5c09332.
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Abstract
SnSe<sub>2</sub> is a layered semiconductor with intrinsically low thermal conductivity, making it a promising candidate for thermoelectric and thermal management applications. However, detailed measurements of the intrinsic thermal conductivity of SnSe<sub>2</sub> nanosheets grown by chemical vapor deposition (CVD) remain scarce. Here, monocrystalline SnSe<sub>2</sub> nanosheets were synthesized by CVD, with systematic investigation of thickness-dependent in-plane thermal conductivity. A noncontact photothermal Raman technique revealed an ultralow lattice thermal conductivity increasing from 1.63 ± 0.26 W/mK in 4 nm SnSe<sub>2</sub> to 3.61 ± 0.11 W/mK in 130 nm samples, approaching the bulk value. Complementary vacuum calibrations and measurements verified that air convection shifts the extracted thermal conductivity by only 5-10%, preserving the thickness-dependent trend. Substrate effects produced distinct heat-transport behavior in suspended versus supported regions, and strain-induced lattice tilting at suspension edges led to reduced thermal conductivity. Moreover, independent measurements with a thermal bridge device confirmed the temperature dependence of the thermal conductivity and validated the Raman results.