Planar Optical Antenna-Driven Brightness Enhancement of Interface-Confined Hexagonal Boron Nitride Single-Photon Arrays for Scalable Room-Temperature Quantum Chips.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 40929304.
- Also identified by DOI 10.1021/acsnano.5c08687.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
While hexagonal boron nitride (hBN) hosts promising room-temperature quantum emitters for hybrid quantum photonic circuits, scalable deterministic integration and insufficient brightness alongside low photon collection and coupling efficiencies remain unresolved challenges. We present a femtosecond laser nanoengineering platform that enables the site-specific generation of hBN single-photon source (SPS) arrays. First-principles density functional theory (DFT) calculations and polarization-resolved spectroscopy confirm the atomic origin of emission as interfacial defects at hBN/SiO<sub>2</sub> heterojunctions. To transcend the intrinsic limitations of dielectric confinement, we introduce a chip-compatible hybrid optical antenna architecture that synergistically combines Purcell-enhanced spontaneous emission with directional far-field collimation. This photonic engineering strategy achieves a 5-fold brightness enhancement while elevating the single-photon saturation count rate from 0.47 Mcounts/s on bare SiO<sub>2</sub>/Si substrates to 3.08 Mcounts/s, maintaining exceptional single-photon purity (<i>g</i><sup>(2)</sup>(0) = 0.14 ± 0.07) and polarization contrast (>90%). The demonstrated integration of deterministic emitter generation with planar quantum nano-optics offers a universal approach to engineering quantum light-matter interactions in van der Waals heterostructures, enabling scalable quantum networks and hybrid two-dimensional (2D) material-based photonic integrated circuits.