Tuning the Electronic Structure in the MoS<sub>2</sub>/SrTiO<sub>3</sub> Heterojunction via Phase Evolution of the SrTiO<sub>3</sub> Substrate.
basic_science · Level V
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- Record sourced from PubMed, PMID 40931844.
- Also identified by DOI 10.1021/acsnano.5c10890.
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Abstract
The coupling between transition metal dichalcogenides (TMDCs) and SrTiO<sub>3</sub> has recently emerged as a fertile platform for discovering interfacial phenomena, where particle interactions, lattice coupling, and dielectric screening give rise to interesting physical effects. These hybrid systems hold significant promise for two-dimensional (2D) electronics, ferroelectric state control, and metastable phase engineering. However, effective modulation of the interfacial electronic structure remains a critical challenge. Here, we investigate the MoS<sub>2</sub>/SrTiO<sub>3</sub> heterostructure using scanning tunneling spectroscopy (STS), angle-resolved photoemission spectroscopy (ARPES), and photoemission spectroscopy (PES), complemented by first-principles calculations. We observe a temperature-dependent evolution of the electronic structure and local density of states driven by the structural phase transition of the SrTiO<sub>3</sub> substrate. This modulation proceeds without conventional band reconstruction but leads to direct changes in the bandgap. Our findings may unveil a robust and spatially uniform mechanism for electronic structure control, offering a temperature-triggered degree of freedom for engineering interfacial states in TMDC-based devices.