Electrostatic-repulsion-based transfer of van der Waals materials.
basic_science · Level V
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- Record sourced from PubMed, PMID 40993257.
- Also identified by DOI 10.1038/s41586-025-09510-0.
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Abstract
Van der Waals (vdW) materials offer unique opportunities for 3D integration<sup>1,2</sup> of planar circuits towards higher-density transistors and energy-efficient computation<sup>3-7</sup>. Owing to the high thermal budget and special substrate requirement for the synthesis of high-quality vdW materials<sup>8-10</sup>, an advanced transfer technique is required that can simultaneously meet a broad range of industrial requirements, including high intactness, cleanliness and speed, large scale, low cost and versatility. However, previous efforts based on either etching or etching-free mechanisms typically only improve one or two of the aforementioned aspects<sup>11-13</sup> and a comprehensive and systematic solution remains lacking. Here we demonstrate an electrostatic-repulsion-enabled advanced transfer technique that is etching free, high yield, fast, wafer scale, low cost and widely applicable, using ammonia solution compatible with the complementary metal-oxide-semiconductor (CMOS) industry. The high material intactness and interface cleanliness enable superior device performances in 2D field-effect transistors with 100% yield, near-zero hysteresis (7 mV) and near-ideal subthreshold swing (65.9 mV dec<sup>-1</sup>). The combination with bismuth contact further enables an ultrahigh on-current of 1.3 mA μm<sup>-1</sup> under 1 V bias. This advanced transfer approach offers a facile and manufacturing-viable solution for vdW-materials-based electronics, paving the way for advanced 3D integration in the future.