Ferroelectric Control of Interlayer Excitons Enables Nonvolatile Quantum Photonic Memory in Two-Dimensional Heterostructures.
basic_science · Level V
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- Record sourced from PubMed, PMID 41006941.
- Also identified by DOI 10.1021/acsnano.5c11442.
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Abstract
Interlayer excitons in van der Waals heterostructures of monolayer transition metal dichalcogenides possess long lifetimes and pronounced out-of-plane dipole moments, offering a promising platform for nonvolatile quantum photonic memory and reconfigurable valleytronic logic. However, conventional tuning approaches─such as electrostatic gating, strain engineering, and chemical doping─are typically volatile, weakly tunable, or nonretentive, limiting the realization of reliable exciton-based information storage. Here, we demonstrate robust, nonvolatile control of interlayer excitons in MoSe<sub>2</sub>/WSe<sub>2</sub>/CuInP<sub>2</sub>S<sub>6</sub> (CIPS) heterostructures via ferroelectric modulation. The bistable polarization states of the CIPS layer, arising from reversible Cu<sup>+</sup> ion displacement under external bias, induce persistent <i>in situ P</i>-type and <i>N</i>-type doping at the MoSe<sub>2</sub>/WSe<sub>2</sub> interface. This built-in polarization field enables deterministic modulation of exciton energy, photoluminescence intensity, line width, and valley polarization─all retained under high magnetic field conditions. Leveraging this mechanism, we realize a reprogrammable excitonic memory element with optically addressable binary logic states. Our findings establish ferroelectric control as a scalable and nonvolatile strategy for excitonic device engineering, opening avenues for electrically programmable quantum optoelectronic systems based on two-dimensional materials.