Low Power FA<sub>2</sub>PbI<sub>4</sub>/SiO<sub>2</sub> Bilayer Memristors with Pt Nanoparticles Exhibiting Reconfigurable Synaptic and Neuron Properties for Compact Optoelectronic Neuromorphic Systems.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 41047591.
- Also identified by DOI 10.1021/acs.nanolett.5c03475 and PMC identifier 12532278.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
The development of artificial neural networks with biorealistic computing properties represents a frontier in the neuromorphic computing era. However, achieving compact and energy-efficient integration of silicon-based synapses and neurons remains challenging due to complexities in their electrical circuits. Herein, we fabricated a low power Ag/SiO<sub>2</sub>/FA<sub>2</sub>PbI<sub>4</sub>/Pt nanoparticles/ITO bilayer memristor with reconfigurable properties, exhibiting dual switching modes and neuromorphic functionalities. These effects were experimentally investigated through transient response and endurance measurements, while valuable insights were provided using a comprehensive numerical model. The SiO<sub>2</sub>/FA<sub>2</sub>PbI<sub>4</sub> and FA<sub>2</sub>PbI<sub>4</sub>/Pt nanoparticle interfaces played a critical role in regulating ion migration, stabilizing filament dynamics and enhancing device reliability. A compact optoelectronic neuromorphic system was demonstrated by integrating synaptic and neuronal elements, enabling precise control of the firing activity. An ultralow power consumption (∼10 fJ/spike) was achieved, comparable to that of the human brain and state-of-the-art memristive technologies, thereby paving the way for energy-efficient optoelectronic computing platforms.