Molecularly tailored dual-interface passivation via solvent-free rub-on transfer for efficient and stable perovskite LEDs.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 41134889.
- Also identified by DOI 10.1126/sciadv.ady4671 and PMC identifier 12551700.
- Licence recorded as CC BY-NC.
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Abstract
Conventional solution-based passivation methods for perovskite light-emitting diodes (PeLEDs) often introduce secondary defects. A molecularly tailored dual-interface passivation strategy is presented using a solvent-free rub-on transfer method, which enables uniform molecular deposition without inducing secondary defects. Specifically, 4-mercaptopyridine (4-MPy) is applied at the buried interface, and 2-mercaptopyridine (2-MPy) is applied on the perovskite surface. At the buried interface, 4-MPy stabilizes Ni<sup>3+</sup> states, reduces oxygen vacancies, and improves hole injection. In contrast, surface-deposited 2-MPy coordinates effectively with undercoordinated Pb<sup>2+</sup> ions, forming wide-bandgap complexes that suppress trap states and enhance carrier confinement. As a result, the optimized PeLEDs achieve a maximum external quantum efficiency of 24.67% and a current efficiency of 95.01 candela per ampere, the highest values reported for solution-processed polycrystalline CsPbBr<sub>3</sub>-based PeLEDs. Furthermore, the operational half-life is substantially extended by nearly 10-fold at an initial luminance of 1000 candela per square meter.