Texture-engineered fabrication of ultraflat, 6-inch single-crystal Cu(111) wafers.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 41160698.
- Also identified by DOI 10.1126/sciadv.ady1943 and PMC identifier 12571084.
- Licence recorded as CC BY-NC.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Ultraflat, single-crystal Cu(111) thin films are widely regarded as ideal epitaxial substrates for synthesizing two-dimensional single crystals for ease of subsequent transfer and device integration. However, the fabrication of Cu(111) remains hindered by a lack of scalable and reliable technique to eliminate in-plane twin boundaries (TBs) in final films. Here, we present a method to address TB issues for harvesting ultraflat, TB-free Cu(111) wafers, which also enable the growth of high-quality, single-crystal graphene wafers. It has been revealed that the deposition of Cu films with designed texture would enable the selective abnormal grain growth of specific Cu(111) during high-temperature annealing, allowing for the production of 6-inch TB-free Cu(111) wafers with high crystallinity (misorientation angle of 0.48°), flatness (<i>R</i><sub>a</sub> = 0.34 nm), and scalability (25 wafers per batch). As-harvested graphene exhibits excellent electronic quality and wafer-scale uniformity, with an average carrier mobility of 10,093 square centimeters per volt per second and sheet resistance of 905 ohm per square with 3.5% deviation over entire wafer.