Strain Engineering of Correlated Charge-Ordered Phases in 1T-TaS<sub>2</sub>.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 41165236.
- Also identified by DOI 10.1021/acs.nanolett.5c04101 and PMC identifier 12636080.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Strain engineering is a powerful strategy for controlling the structural and electronic properties of two-dimensional materials, particularly in systems hosting charge density wave (CDW) order. In this work, we apply uniaxial tensile and compressive strain to thin 1T-TaS<sub>2</sub> flakes using a flexible, device-compatible platform and systematically investigate the strain-dependent behavior of the nearly commensurate (NC) to incommensurate (IC) CDW phase transition. This transition is driven by Joule heating at room temperature. Electrical transport measurements reveal that both the switching threshold voltage and the resistance of the NC-CDW phase exhibit clear, reversible strain dependence. Furthermore, we identify a quadratic dependence between the strain-induced resistance change and the threshold voltage, confirming that piezoresistive modulation governs the strain tunability of the phase transition. We demonstrate a room-temperature, electrical readout strain and displacement sensor with a threshold-like response in a programmable window. These results highlight the potential of 1T-TaS<sub>2</sub> for on-chip sensing of strain and displacement.