Nanoscale Tracking of the High-Temperature Spin-State Transition in LaCoO<sub>3</sub>.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 41190735.
- Also identified by DOI 10.1021/acs.nanolett.5c03863 and PMC identifier 12636071.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
The high-temperature spin and electronic transitions in LaCoO<sub>3</sub> have recently been leveraged to create neuromorphic (brain-inspired) devices. While these devices have shown the potential for impactful functionality in next-generation computing systems, the nanoscale dynamics of the spin and electronic transitions that underlie their operation are not well understood. Inhomogeneities related to interfaces, electrode contacts, strain, and crystal defects can all affect device performance, making nanoscale characterization of the transitions essential for producing consistent and reliable devices. Here, we demonstrate the first nanoscale in situ measurement of the spin transition in LaCoO<sub>3</sub> at device-relevant temperatures (25-325 °C) over length scales of tens of nanometers using STEM-EELS. This measurement is enabled by an Al<sub>2</sub>O<sub>3</sub> coating, which prevents unwanted reduction of the LaCoO<sub>3</sub> specimen at high temperature and vacuum. The detailed understanding of LaCoO<sub>3</sub> transition dynamics enabled by such measurements will be crucial for optimizing LaCoO<sub>3</sub>-based neuromorphic devices and increasing reliability for real-world application.