Electrical Control of Quantum Dots in GaAs-on-Insulator Waveguides for Coherent Single-Photon Generation.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 41195876.
- Also identified by DOI 10.1021/acs.nanolett.5c04044.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
The integration of coherent quantum emitters with silicon photonic platforms is essential for scalable quantum technologies. We demonstrate electrically controlled self-assembled quantum dots embedded in GaAs waveguides bonded onto a SiO<sub>2</sub>/Si substrate and coupled to low-loss SiN waveguides. Our approach uses a die-to-die adhesive bonding process to realize a GaAs-on-insulator platform incorporating a p-i-n junction for charge noise suppression and Stark tuning of excitonic transitions. Resonance fluorescence measurements reveal narrow optical line widths below 2 μeV and high single-photon purity, with <i>g</i><sup>(2)</sup>(0) = (5.2 ± 0.8)%, matching the performance of unprocessed GaAs devices. These results establish a practical route to integrate high-coherence quantum light sources with mature silicon photonics, enabling scalable quantum photonic integrated circuits.