Dual Vacancy-Driven "Lattice Softening" NiFeAl<sub>x</sub> LDHs for High-Rate and Durable Chloride Ion Storage.
basic_science · Level V
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- Record sourced from PubMed, PMID 41243741.
- Also identified by DOI 10.1002/adma.202517528.
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Abstract
Defect engineering becomes an essential strategy for enhancing electrochemical performance, yet its application in anion-based systems such as chloride-ion batteries (CIBs) remains largely unexplored. Herein, a rational defect-engineering strategy is developed to overcome these bottlenecks by constructing dual-vacancy NiFeAl<sub>x</sub> layered double hydroxides (LDHs) featuring coexisting cationic and oxygen vacancies, achieved via a room-temperature alkaline etching process that selectively leaches Al<sup>3+</sup> while retaining layered integrity. The optimized NiFeAl<sub>0.04</sub>-24h-Cl LDH exhibits unprecedented "lattice softening" behavior, enabling elastic deformation and dynamic structural reconstruction to accommodate volumetric fluctuations during Cl-intercalation/de-intercalation. Benefiting from this defect-induced structural flexibility, the electrode delivers a high reversible capacity of 101.4 mAh g<sup>-1</sup> after 1000 cycles at 1000 mA g<sup>-1</sup>, along with the Coulombic efficiency of 99.91%. Multiscale mechanistic analyses demonstrate that the coupled vacancies regulate local electronic distribution and coordination environments while simultaneously imparting pronounced lattice softening and structural elasticity to the NiFeAl<sub>0.04</sub>-24h-Cl LDH, thereby facilitating enhanced Cl<sup>-</sup> ion accommodation. Furthermore, the vacancies construct interconnected 3D ion highways, which dramatically accelerate Cl<sup>-</sup> diffusion, enhance interfacial adsorption kinetics, and minimize charge-transfer resistance. Such lattice-adaptive regulation resolves the long-standing trade-off between anion-storage capacity and structural stability in LDH-based systems, offering a promising strategy for designing efficient anion-hosting electrodes for advanced CIB systems.