Ferroelectricity-driven strain-mediated magnetoelectric coupling in two-dimensional multiferroic heterostructure.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 41309615.
- Also identified by DOI 10.1038/s41467-025-65688-x and PMC identifier 12660893.
- Licence recorded as CC BY-NC-ND.
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Abstract
In the post-Moore era, CMOS technology faces challenges in storage and power consumption. Two-dimensional van der Waals ferromagnets, with their atomically sharp interfaces, enable heterostructure with ferroelectric materials. Through strong magnetoelectric coupling effects, they provide an ideal platform for developing highly efficient magnetoelectric interfaces. Leveraging this ideal platform, this study proposes a strain-modulation strategy based on vertically integrated two-dimensional van der Waals multiferroic heterojunctions Fe<sub>3</sub>GaTe<sub>2</sub>/P(VDF-TrFE) to address these challenges. This structure utilizes the inverse piezoelectric effect of ferroelectric polymers to induce strain. Through magnetoelectric coupling, the heterojunction achieves non-volatile reconfiguration of the magnetic anisotropy constant of Fe<sub>3</sub>GaTe<sub>2</sub> at room temperature. This enables fully reversible electrical control of the anomalous Hall resistance and inverter functionality. Device integration validated reconfigurable logic gates and half-adder circuits, demonstrating ultra-low energy consumption (0.5 aJ), nanosecond-scale write speeds (5 ns), and high operational stability.