Strain-driven domain wall network with chiral junctions in an antiferromagnet.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 41318611.
- Also identified by DOI 10.1038/s41467-025-66700-0 and PMC identifier 12669766.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Antiferromagnetic materials have recently emerged as promising candidates in spintronics. At the same time, more complex localized non-coplanar magnetic states such as skyrmions are in the research focus due to their intriguing dynamical and transport properties. Recently, a conceptual shift has occurred to envision the use of such magnetic defects not only in one-dimensional race track devices but also to exploit their unique properties in two-dimensional networks. Here we use local strain in a collinear antiferromagnetic film to induce a complex domain wall network. Using spin-polarized scanning tunneling microscopy we characterize the different building blocks of the network - ranging from collinear magnetic domains, over non-collinear domain walls, to non-coplanar localized domain wall junctions - on the atomic scale. We find that the triple domain wall junctions exhibit a structural handedness. The origin is an exchange-driven lateral relaxation as explained using first-principles calculations. We predict that the domain wall junctions exhibit topological orbital magnetization generated by their non-coplanar spin structure, implying topological transport properties due to the network.