One-Step Annealing-Configured Hf<sub>0.2</sub>Zr<sub>0.8</sub>O<sub>2</sub> Memristive-Antiferroelectric Devices for Bioinspired CSNN Neuromorphic Computing.
basic_science · Level V
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- Record sourced from PubMed, PMID 41342516.
- Also identified by DOI 10.1021/acs.nanolett.5c04249.
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Abstract
Traditional computing systems are limited by separated architectures, inspiring the development of compatible artificial neuron and synaptic devices for hybrid neuromorphic computing. Here, we present a CMOS-compatible, single-stack Hf<sub>0.2</sub>Zr<sub>0.8</sub>O<sub>2</sub> (HZO) platform in which the as-deposited film serves as a memristive synapse, while a one-step postdeposition anneal yields an antiferroelectric (AFE) neuron device. Both device roles share identical CMOS-compatible premanufacturing steps; a single, nonreversible postanneal diverges the same TiN/HZO/TiN stack into the AFE-neuron path. A memristive device enables analogue conductance modulation for convolutional feature extraction. After annealing, antiferroelectric devices achieve spontaneous depolarization behavior, paving the way for spike-based encoding and biologically plausible neuronal dynamics. By integrating this process-compatible dual-mode device set within a unified material platform, a convolutional spiking neural network was constructed with 97.9% accuracy in dynamic gestures. This work highlights CMOS compatible neuromorphic electronics for hybrid neuromorphic computing within compact neuromorphic hardware.