Nanoscale Metal-Insulator-Semiconductor Tunnel Junction for Multibit Excitonic Data Storage.
basic_science · Level V
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- Record sourced from PubMed, PMID 41347726.
- Also identified by DOI 10.1021/acsnano.5c15152.
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Abstract
The exponential growth of digital information presents a critical challenge for the sustainable data preservation. While optical data storage (ODS) systems have emerged as a promising solution for economical and long-term data archiving, conventional ODS technologies face limitations due to the optical diffraction limit and inability to harness emerging excitonic properties, restricting further improvements in storage density. Here, we demonstrate a multibit excitonic data storage (EDS) system by generating nanoscale metal-insulator-semiconductor tunnel junctions. By precisely modulating the extent of Ohmic contact within these junctions, we control the doping-related exciton recombination dynamics of atomically thin semiconductors. The modulated EDS system exhibits three discrete photoluminescence intensity levels within a unit data-space of ∼60 nm, demonstrating nanoscale multilevel data encoding. Our work provides a strategy for ultrathin nano-EDS technologies for future advancements in archival storage systems.