Water-Assisted Concerted Layer Growth of T<sub>d</sub>-Phase WTe<sub>2</sub> for Nonlinear Hall Effect and Microwave Rectification.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 41347748.
- Also identified by DOI 10.1021/acs.nanolett.5c05085.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
The T<sub>d</sub> phase of tungsten ditelluride (WTe<sub>2</sub>), a noncentrosymmetric transition metal dichalcogenide, hosts rich correlated phenomena, topological states, and nonlinear transport responses. However, the scalable synthesis of high-quality few-layer WTe<sub>2</sub> with precise layer control remains challenging. Here, we report a water-assisted chemical vapor deposition approach that deterministically grows monolayer to trilayer T<sub>d</sub>-WTe<sub>2</sub> with controlled flake size and density. Moisture-mediated precursor liquefaction through salt-assisted intermediates enables vapor-liquid-solid growth and tunable layer numbers through a concerted layer growth mode. Transport studies reveal that trilayer WTe<sub>2</sub> exhibits a nonlinear Hall effect susceptibility of 1.1 μm·V<sup>-1</sup> at 10 K and 0.5 μm·V<sup>-1</sup> at 50 K, nearly an order of magnitude higher than that in bilayers, consistent with the calculated Berry curvature dipole enhancement. Layer-dependent microwave rectification further highlights the influence of topological band structure and interlayer coupling. These results establish layer-engineered T<sub>d</sub>-WTe<sub>2</sub> as a promising platform for nonlinear quantum transport and high-frequency optoelectronic applications.