Enhanced 2D MoTe<sub>2</sub> Analogue Switching through Laser Processing and ALD-Passivation for Dual-Function Neuromorphic Devices.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 41397939.
- Also identified by DOI 10.1021/acs.nanolett.5c05915 and PMC identifier 12750991.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Neuro-based computing, enabled by memristors and memtransistors, has drawn significant attention, with two-dimensional (2D) molybdenum ditelluride (MoTe<sub>2</sub>) emerging as a promising candidate for its low phase-change energy barrier and tunable electrical behavior. However, realizing the full potential of MoTe<sub>2</sub> for neuromorphic applications has been hindered by the lack of a sufficiently large memory window in pristine devices. In this work, we present an effective method to significantly enhance the analogue switching of lateral MoTe<sub>2</sub> devices. This method involves two sequential processes: laser treatment followed by the atomic layer deposition of Al<sub>2</sub>O<sub>3</sub>. The synergistic effects of both processes yielded significant performance improvements, with a 70-fold improvement in dynamic range when operating as a memristor and a 20-fold enhancement when functioning as a memtransistor. Consequently, artificial neural network simulations demonstrated a 10-fold enhancement in pattern recognition accuracy, while the dual memristor/memtransistor capability enabled the emulation of both homosynaptic and heterosynaptic plasticity.