Optical Tuning of Non-Equilibrium Surface Plasmon Resonances in a Narrow-Gap Semiconductor Nanocavity.
basic_science · Level V
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- Record sourced from PubMed, PMID 41400146.
- Also identified by DOI 10.1002/adma.202501376.
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Abstract
In photonics, the polaritonic nanocavity (PC) within the mid-infrared to terahertz region is pivotal in on-chip applications, spanning diverse domains such as bio-sensing and beyond-5G information processing. Nevertheless, the impediment posed by lattice vibrations' electrical neutrality restricts phononic PCs' active tuning through electro-optical methodologies. In response to this constraint, the potential of narrow-gap semiconductors is investigated, which is characterized by highly efficient optical carrier incubation capabilities to facilitate all-optical plasmonic PC tuning. Leveraging ultrafast nanoscopy, the temporal evolution of non-equilibrium plasmonic cavity modes is meticulously scrutinized in InSb nanosheets. These findings unveil that multi-valence band transitions engender substantial free carriers, culminating in optically tunable non-equilibrium plasmonic cavity modes with a rapid switching capability of less than 6 ps, affording facile 2π plasmonic phase control. This study substantiates the prospect that conventional III-V semiconductors offer a robust platform for tunable transient surface plasmon resonances, thereby paving the way for innovative integrated optical applications seamlessly adapting to established semiconductor technologies.