Doping-induced magnetic phase transition enables all-electrical spin control in CrSBr.
basic_science · Level V
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- Record sourced from PubMed, PMID 41419480.
- Also identified by DOI 10.1038/s41467-025-67561-3 and PMC identifier 12827471.
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Abstract
Van der Waals antiferromagnetic semiconductors are promising platforms for energy-efficient two-dimensional spintronics. However, their intrinsic spin degeneracy and the difficulty of achieving electrical spin control pose major challenges for practical device implementation. Here, we present a distinct spintronic platform based on an antiferromagnetic semiconductor CrSBr, in which carrier doping induced by gate-controlled intercalation drives a reversible, zero-field antiferromagnetic to ferromagnetic phase transition, enabling direct and full electrical control of both magnetic order and spin polarization. Exploiting this transition, we engineer CrSBr/graphene heterostructures that leverage interfacial charge transfer to spatially pattern magnetic phases, resulting in lateral spin valves with gate-controlled spin polarization reversal, all without ferromagnetic contacts. Crucially, this mechanism also enables electrical switching of magnetic order via spin-transfer torque at ultralow current densities (<10<sup>3</sup> A/cm<sup>2</sup>), demonstrating its efficiency and device compatibility. These findings open a new paradigm for reconfigurable, all-electrical spintronic systems based on van der Waals antiferromagnetic semiconductors.