Porous Bi<sub>2</sub>S<sub>3</sub> Bulk With Excellent Thermoelectric Performance by Solid States Replacement and Low Melting-Point Metal Volatilization.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 41482708.
- Also identified by DOI 10.1002/adma.202521215 and PMC identifier 12921355.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Bismuth sulfide (Bi<sub>2</sub>S<sub>3</sub>) exhibits potentials in thermoelectric field, due to their environmental friendliness, high Seebeck coefficients, and low thermal conductivity. However, the peak ZT for binary Bi<sub>2</sub>S<sub>3</sub> does not exceed 1.0, inhibiting its practical applications. Starting from the precipitation smelting of bismuth concentrate process, this study constructs multi-type, multi-scale in-situ secondary phases and porous structures through FeCoNi (FCN) medium-entropy alloy addition, significantly enhancing the ZT value of Bi<sub>2</sub>S<sub>3</sub>-based thermoelectric materials. The introduced FCN reacts with pre-synthesized Bi<sub>2</sub>S<sub>3</sub> nanorod matrix during spark plasma sintering and forms precipitate complex with FCN-S core and Bi shell microstructures. FCN doping improves the carrier concentration of Bi<sub>2</sub>S<sub>3</sub> and the reduced Bi from Bi<sub>2</sub>S<sub>3</sub> acts as carrier transport channels for mobility optimization. Due to the stacking effect of Bi<sub>2</sub>S<sub>3</sub> nanorods and the volatile nature of metallic Bi, porous Bi<sub>2</sub>S<sub>3</sub> structure is formed, characterized by randomly-distributed and micro-to-nanoscale pores. The coexistence of various lattice defects effectively scatter phonons and suppress the lattice thermal conductivity, thus an excellent peak ZT of 1.1 is achieved at 773 K in a 0.25 wt.% FCN-doped Bi<sub>2</sub>S<sub>3</sub> sample. This study, drawing on the process of ore smelting, proposes a convenient method for preparing high-performance chalcogenide thermoelectric materials with porous structures.