Porous Bi<sub>2</sub>S<sub>3</sub> Bulk With Excellent Thermoelectric Performance by Solid States Replacement and Low Melting-Point Metal Volatilization.

Wang, Zi-Yuan; Guo, Jun; Zhang, Yi-Xin; Liang, Hao; Yang, Xing; Dunin-Borkowski, Rafal E; Zheng, Fengshan; Jin, Lei et al. · Adv Mater · 2026

basic_science · Level V

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Abstract

Bismuth sulfide (Bi<sub>2</sub>S<sub>3</sub>) exhibits potentials in thermoelectric field, due to their environmental friendliness, high Seebeck coefficients, and low thermal conductivity. However, the peak ZT for binary Bi<sub>2</sub>S<sub>3</sub> does not exceed 1.0, inhibiting its practical applications. Starting from the precipitation smelting of bismuth concentrate process, this study constructs multi-type, multi-scale in-situ secondary phases and porous structures through FeCoNi (FCN) medium-entropy alloy addition, significantly enhancing the ZT value of Bi<sub>2</sub>S<sub>3</sub>-based thermoelectric materials. The introduced FCN reacts with pre-synthesized Bi<sub>2</sub>S<sub>3</sub> nanorod matrix during spark plasma sintering and forms precipitate complex with FCN-S core and Bi shell microstructures. FCN doping improves the carrier concentration of Bi<sub>2</sub>S<sub>3</sub> and the reduced Bi from Bi<sub>2</sub>S<sub>3</sub> acts as carrier transport channels for mobility optimization. Due to the stacking effect of Bi<sub>2</sub>S<sub>3</sub> nanorods and the volatile nature of metallic Bi, porous Bi<sub>2</sub>S<sub>3</sub> structure is formed, characterized by randomly-distributed and micro-to-nanoscale pores. The coexistence of various lattice defects effectively scatter phonons and suppress the lattice thermal conductivity, thus an excellent peak ZT of 1.1 is achieved at 773 K in a 0.25 wt.% FCN-doped Bi<sub>2</sub>S<sub>3</sub> sample. This study, drawing on the process of ore smelting, proposes a convenient method for preparing high-performance chalcogenide thermoelectric materials with porous structures.