Field-effect passivation for minimized voltage loss in highly efficient antimony selenosulfide solar cells.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 41495043.
- Also identified by DOI 10.1038/s41467-025-67334-y and PMC identifier 12775381.
- Licence recorded as CC BY-NC-ND.
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Abstract
The inferior heterojunction quality and misaligned energy levels at the buffer/absorber interface cause severe interface recombination and large open-circuit voltage (V<sub>OC</sub>) loss, limiting the power conversion efficiency (PCE) of antimony selenosulfide (Sb<sub>2</sub>(S,Se)<sub>3</sub>) solar cells. Here, we develop a field-effect passivation strategy by introducing a low-work-function Ta<sub>2</sub>O<sub>5</sub> dielectric layer between the CdS and Sb<sub>2</sub>(S,Se)<sub>3</sub> layers. This Ta<sub>2</sub>O<sub>5</sub> layer serves as an optimal substrate for growing highly crystalline Sb<sub>2</sub>(S,Se)<sub>3</sub> films while also enhancing interfacial charge transport. The positive fixed charges in Ta<sub>2</sub>O<sub>5</sub> strengthen the built-in electric field and promotes electrons extraction while suppressing holes accumulation at the interface, thereby substantially suppressing non-radiative recombination probabilities. Implementing this passivation strategy yields a record PCE of 10.95% (10.65% certified) an V<sub>OC</sub> of 695 mV, corresponding to a remarkably low voltage deficit. This work establishes a universal physical passivation paradigm for interface quality optimization and V<sub>OC</sub> loss mitigation in high-performance Sb<sub>2</sub>(S,Se)<sub>3</sub> photovoltaics.