Spectroscopic Performance of CsPbBr<sub>3</sub> Perovskite γ-Ray Detectors Despite Grain Boundaries.
basic_science · Level V
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- Record sourced from PubMed, PMID 41518303.
- Also identified by DOI 10.1002/adma.202518137.
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Abstract
The CsPbBr<sub>3</sub> perovskite has emerged as a promising material for next-generation γ-ray detection owing to its high stopping power, wide bandgap, and excellent charge-transport properties. Unlike conventional semiconductors, in which grain boundaries (GBs) degrade response, we observed that CsPbBr<sub>3</sub> retains functional spectroscopic performance in their presence, demonstrating remarkable defect tolerance. We systematically investigate the impact of GBs on the performance and stability of CsPbBr<sub>3</sub>-based detectors. Detectors containing GBs exhibit measurable spectroscopic performance at room temperature, including resolved photopeaks at 59.5 keV (<sup>241</sup>Am) and 122 keV (<sup>57</sup>Co), along with hole mobility-lifetime products (µτ)<sub>h</sub> on the order of ∼10<sup>-4</sup> cm<sup>2</sup>·V<sup>-1</sup>, highlighting the defect-tolerant nature of CsPbBr<sub>3</sub>. Two-photon excitation PL microscopy shows asymmetric carrier diffusion near GBs (under zero field bias), indicative of impeded charge transport, while transient waveform analysis captures field-assisted detrapping that recovers charge collection on application-relevant timescales. Our measurements indicate that device engineering choices, pixel placement/size, guard rings, field shaping, and electrode work-function design can help drift paths and electric fields away from defects, and may reduce GB impacts.