Low-Density InGaAs/AlGaAs Quantum Dots in Droplet-Etched Nanoholes.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 41537462.
- Also identified by DOI 10.1021/acs.nanolett.5c04426 and PMC identifier 12856885.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single and entangled photons on-demand. Among different growth methods, droplet etching epitaxy has allowed the growth of almost strain-free QDs, with low and controllable surface densities, small excitonic fine structure splitting (FSS), and fast radiative decays. Here, we extend the technique to In(Ga)As QDs in AlGaAs, thereby increasing the achievable emission wavelength range beyond that accessible to GaAs/AlGaAs QDs while preserving some of the key advantages of this growth method. We observe QD densities of ∼0.25 μm<sup>-2</sup>, FSS values as small as 3 μeV, and short radiative lifetimes of ∼300 ps, while extending the achievable emission wavelength to ∼900 nm at cryogenic temperatures. We envision these QDs to be particularly suitable for integrated quantum photonics applications.