Two-Dimensional Metal-Insulator Transition in Ultrathin VO<sub>2</sub> Nanosheets via Remote van der Waals Epitaxy.
basic_science · Level V
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- Record sourced from PubMed, PMID 41571002.
- Also identified by DOI 10.1021/acs.nanolett.5c05107.
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Abstract
Vanadium dioxide (VO<sub>2</sub>) undergoes a rutile-to-monoclinic metal-insulator transition (MIT) at 340 K. Marked by abrupt resistivity changes of 10<sup>4</sup>-10<sup>5</sup> Ω·cm, this property has long attracted interest for electronic applications. However, when VO<sub>2</sub> is a few nanometers thick, substrate-induced strain destabilizes the MIT, which limits device performance. To overcome this, two-dimensional (2D) VO<sub>2</sub> nanostructures grown with a remote distance from substrates can reveal intrinsic strain-free electrical behavior and enable high-performance MIT-based devices. We report the growth of few-nanometer-thick 2D VO<sub>2</sub> via remote van der Waals epitaxy. Transmission electron microscopy confirmed the monoclinic (M1) crystal structure. Conductive atomic force microscopy (c-AFM) measurements demonstrated a complete onset of 2D MIT at 1.5 V, achieving an on/off ratio of nearly 10<sup>4</sup>.