Mie-Void-Enabled WS<sub>2</sub> Excitonic Emitters with Nanoscale Footprints.
basic_science · Level V
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- Record sourced from PubMed, PMID 41617528.
- Also identified by DOI 10.1021/acs.nanolett.5c05977.
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Abstract
Owing to their strong excitonic effects, monolayer transition metal dichalcogenides (1L TMDs) are highly promising for next-generation excitonic light-emitting devices. To enhance exciton emission, 1L TMDs are typically integrated with dielectric optical resonators, which, however, results in a large footprint and/or interface-induced exciton emission suppression. To overcome these fundamental issues, we herein present the experimental demonstration of nanoscale tungsten disulfide (WS<sub>2</sub>) excitonic light-emitting devices enabled by Mie voids. Such a Mie void not only supports a localized Mie resonance in the nanoscale air hole to enhance exciton emission but also suspends 1L WS<sub>2</sub> in the air to eliminate the emission suppression from the contact interface. When we leverage the nanoscale field localization within Mie voids, a high-resolution light-emitting display is realized with a pixel size of ∼1.12 μm. Our work opens a door to nanoscale 2D semiconductor light sources with potential applications in a high-resolution light-emitting display.