Step-Edge-Guided Growth of Single-Crystalline γ-Bi<sub>2</sub>O<sub>3</sub> with Unidirectional Orientation as a High-κ Dielectric for 2D Transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 41645550.
- Also identified by DOI 10.1021/acs.nanolett.5c05693.
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Abstract
2D dielectrics are promising for next-generation integrated circuits, yet the development of high-performance 2D dielectrics is hindered by challenges such as a low crystallinity, insufficient dielectric constant, and lack of scalable synthesis. Here, we present a chemical vapor deposition technique that enables step-edge-guided growth of single-crystalline γ-Bi<sub>2</sub>O<sub>3</sub> with unidirectional orientation on the C/M sapphire substrate with a miscut angle of 0.2 ± 0.05°. The obtained γ-Bi<sub>2</sub>O<sub>3</sub> films exhibit exceptional dielectric properties, including a high dielectric constant of 39.38 and an ultralow leakage current density of 2.5 × 10<sup>-5</sup> A cm<sup>-2</sup>. With integration into top-gated γ-Bi<sub>2</sub>O<sub>3</sub>/MoS<sub>2</sub> field-effect transistors, the devices achieve a high on/off ratio exceeding 10<sup>6</sup>, a near-ideal subthreshold swing of 80 mV dec<sup>-1</sup>, and a small hysteresis window of 19 mV, along with excellent thermal stability over 300-450 K and prolonged environmental stability over 4 months. These results establish γ-Bi<sub>2</sub>O<sub>3</sub> as a compelling high-κ dielectric candidate to address scaling challenges in low-power nanoelectronics.