Nanogate ferroelectric transistors with ultralow operation voltage of 0.6 V.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 41686907.
- Also identified by DOI 10.1126/sciadv.aea5020 and PMC identifier 12904176.
- Licence recorded as CC BY-NC.
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Abstract
Ferroelectric field-effect transistors (FeFETs), as an electric field-driven nonvolatile memory, offer extremely low power consumption and high speed. Despite efforts, FeFETs have not been successfully scaled down to sub-5-nanometer-node technology, with their operational voltage exceeding 1.5 V, making them unable to match monolithic logic cores. Our study used metallic single-walled carbon nanotubes as gate electrodes to shrink the gate length of molybdenum disulfide FeFET to 1 nanometer. This nanogate approach leads to an electric field concentration and enhanced ferroelectric-to-metal-oxide semiconductor capacitance coupling, resulting in a reduced operating voltage of 0.6 V, below the conventional ferroelectric coercive voltage. The nanogate molybdenum disulfide FeFETs exhibit superior memory performance, with a substantial current on/off ratio of 2 × 10<sup>6</sup> and a rapid programming speed of 1.6 nanoseconds. This study demonstrates the immunity of nanogate FeFETs to short-channel effects, highlighting the notable potential of ferroelectric electronics for enabling superior scaling, performance, and energy efficiency in sub-1-nanometer-node chips.