Efficient and Robust p-Type Transistor Based on Ultrawide-Bandgap Semiconductor.

Abstract

The <i>p</i>-type transistor is an indispensable component of semiconductor technology, enabling a complementary operation with <i>n</i>-channel transistors for computation, storage, and communication. Achieving both high robustness and high efficiency is highly desirable but challenging for <i>p</i>-type transistors due to the limited semiconductors with reliable hole transport and their high activation energies. Here, we achieved a robust yet efficient <i>p</i>-type transistor by heterogeneously integrating an ultrawide-bandgap semiconductor and a high-<i>κ</i> dielectric layer through van der Waals integration. The <i>p</i>-type transistor employs a two-dimensional hole channel on hydrogenated diamond (bandgap 5.6 eV) combined with a high-<i>κ</i> (30.5) SrTiO₃ perovskite membrane. At room temperature, the transistor exhibits stable operation with a high on-current (∼200 mA/mm), low subthreshold swing (70 mV/dec), high hole mobility (566 cm²/(V·s) to 572 cm²/(V·s)), and high on-off ratio (∼10⁹). Furthermore, tuning the annealing temperature allows operation in either enhancement or depletion mode. The robust <i>p</i>-type transistor with high efficiency holds great potential for future power electronics, ultraviolet (UV) optoelectronics, and harsh-environment electronic applications.