Integration of Polarization Sensing, Memory, and Logic in a Crystal-Axis-Aligned Oxygen-Intercalated Transistor.
basic_science · Level V
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- Record sourced from PubMed, PMID 41735059.
- Also identified by DOI 10.1021/acs.nanolett.6c00016.
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Abstract
The rapid development of data-centric applications requires the removal of interfaces between sensing, memory, and computing units to maximize system efficiency. Here, we report the direct integration of polarization-resolved photodetection, photocurrent memory, and optoelectronic logic within one transistor architecture. The transistor, termed the COT (crystal-axis-aligned oxygen-intercalated transistor), employs anisotropic PdSe<sub>2</sub> as the contacts and anisotropic ReS<sub>2</sub> as the channel with crystal-axis-aligned stacking to maximize polarization sensitivity, while introducing a nanoscale oxygen-trapping layer beneath the channel for persistent photocurrent memory. The synergistic photoresponse in the contacts and channel yields an ultrahigh responsivity of 5.2 × 10<sup>7</sup> A W<sup>-1</sup> and a specific detectivity of 7.8 × 10<sup>15</sup> cm Hz<sup>1/2</sup> W<sup>-1</sup>. The confined oxygen enables an ultralong retention time of 6 × 10<sup>4</sup> s and 33 memory states. Due to the high polarization sensitivity, the device can further use different polarization vectors to realize reconfigurable optoelectronic logic gates, such as wavelength-tunable AND and OR.