Electric-Field Modulation of Trap-Induced Energy Barriers at Single-Grain Boundaries in Monolayer C<sub>10</sub>-DNTT Transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 41739096.
- Also identified by DOI 10.1021/acs.nanolett.6c00236.
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Abstract
Energy fluctuations caused by traps within organic semiconductor films present a significant challenge to intrinsic charge transport, severely impairing the efficiency, stability, and uniformity of organic electronic devices. Here, we propose a precise electric-field engineering strategy to actively modulate trap-induced localized energy barriers, thereby improving the charge transport in organic thin-film transistors (OTFTs). Our results demonstrate that charge transport in monolayer C<sub>10</sub>-DNTT polycrystals is highly sensitive to the applied electric field. By increasing the lateral electric field, we effectively reduce the trap-induced barrier height to the thermal voltage level (<math xmlns="http://www.w3.org/1998/Math/MathML"><mfrac><mrow><msub><mrow><mi>k</mi></mrow><mrow><mi>B</mi></mrow></msub><mi>T</mi></mrow><mrow><mi>q</mi></mrow></mfrac></math>) and increase the carrier velocity by more than 2 orders of magnitude. We also demonstrate an OTFT array with mobility uniformity of 97.1%, as well as an enhancement-depletion mode amplifier featuring a voltage gain exceeding 3200 and power consumption below 0.5 nW. These performance metrics hold significant promise for applications in flexible amplifiers and ultralow-power analog circuits.