Electron confinement-enhanced green InP-based quantum dots for active-matrix LEDs displays.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 41760630.
- Also identified by DOI 10.1038/s41467-026-69050-7 and PMC identifier 13066630.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
The facet-selective growth of shells on green InP-based quantum dots result in their inferior electron confinement capabilities, posing a challenge for the realization of completely cadmium-free quantum dot light-emitting diode displays. Here, we develop a surface energy homogenization strategy based on ligand adsorption using n-octylamine and diphenylphosphine selenide, effectively suppressing selective growth of ZnSe on the InP (111) facet, resulting in strongly electron-confined InP/ZnSe/ZnS quantum dots with a quantum yield exceeding 92% and a full-width at half-maximum of 35 nm. The resulting quantum dot light-emitting diodes achieve a peak external quantum efficiency of 23.50% and a luminance exceeding 1.4 × 10<sup>5 </sup>cd m<sup>-2</sup>, with a 107.5-fold increase in device lifetime. Utilized asymmetric wettability-mediated assembly strategy, we achieved quantum dot arrays with an impressive resolution of 8460 PPI. Furthermore, integrating the quantum dots into an active-matrix LED display, we successfully demonstrate the display of both static and dynamic images.