Moisture-responsive crystallization strategy for efficient CsPbI<sub>3</sub> solar cells fabricated under high-humidity conditions.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 41776173.
- Also identified by DOI 10.1038/s41467-026-69687-4 and PMC identifier 13066400.
- Licence recorded as CC BY-NC-ND.
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Abstract
The intrinsic phase instability of CsPbI<sub>3</sub> perovskites necessitates stringent fabrication conditions, significantly hindering the practical deployment. In the DMA-mediated CsPbI<sub>3</sub> nucleation system, the Cs<sup>+</sup>/DMA<sup>+</sup> ion exchange critically governs the resulting film quality. Here, we employ a moisture-responsive crystallization strategy utilizing propyltriethoxysilane (PTES) to deposite CsPbI<sub>3</sub> under ambient air with high humidity (55%). We demonstrate that the siloxane groups can capture DMA<sup>+</sup> in the intermediate DMAPbI<sub>3</sub>, facilitating DMA<sup>+</sup> extraction and Cs<sup>+</sup> incorporation, thereby accelerating crystallization kinetics. This approach enables CsPbI<sub>3</sub> PSCs to achieve a power conversion efficiency (PCE) of 21.00% with an impressive fill factor (FF) of 86.1% while processing perovskite under relative humidity (RH) of 55%. Higher PCEs of 21.85% and 22.60% (certified 22.02%) were achieved for devices fabricated at a lower RH of 25% and for films spin-coated under an N<sub>2</sub> atmosphere followed by annealing in ambient air, respectively. Furthermore, PTES-treated devices exhibit excellent operational stability under ambient conditions.