Enhancing Curie Temperature for CrTe<sub>2</sub>-Containing Heterostructures via Interfacial Engineering.
basic_science · Level V
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- Record sourced from PubMed, PMID 41811352.
- Also identified by DOI 10.1021/acs.nanolett.6c00077.
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Abstract
Two-dimensional (2D) van der Waals (vdW) ferromagnetic heterostructures offer a nondestructive strategy for engineering and modifying the magnetic and electronic properties of 2D materials. Realizing large-area, atomically thin 2D vdW ferromagnets with Curie temperature (<i>T</i><sub>c</sub>) above room temperature remains a key challenge due to the limited size, uncontrolled thickness, and suppressed magnetism of existing materials. Here, we report the wafer-scale growth of layer-controlled CrTe<sub>2</sub>-containing vdW heterostructures via a "high-to-low" temperature growth strategy. This approach enables the precise fabrication of diverse heterostructures with atomically sharp interfaces, controlled layer numbers, and excellent structural uniformity across 4 in. wafers. Systematic characterizations reveal robust proximity-induced interfacial magnetic enhancement, achieving a <i>T</i><sub>c</sub> of up to 300 K in WTe<sub>2</sub>/6L CrTe<sub>2</sub> and PtTe<sub>2</sub>/6L CrTe<sub>2</sub> wafers through large spin-orbit coupling. This work provides a scalable pathway for constructing high-quality 2D magnetic vdW heterostructures and provides a rational design framework for future 2D spintronic devices.