Sn<sup>2+</sup>-Induced In Situ Phase Modulation Enabling a Highly Active o-SnSe/h-NiSe/r-Ni<sub>3</sub>Se<sub>2</sub> Multifunctional Heterostructure for Photo-Thermal/Electronic Urea Water Splitting.

Chang, Yanan; Lu, Xuyun; Tan, Qiao; Li, Jianing; Tang, Yawen; Bao, Jianchun; Liu, Ying; Ma, Chao et al. · Adv Mater · 2026

basic_science · Level V

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Abstract

The construction of highly active sites and the simultaneous establishment of photothermal/photoelectronic phases represent an emerging paradigm for boosting small-molecule-assisted water splitting. Herein, we report an effective Sn<sup>2+</sup>-initiated phase-modulation strategy for the facile synthesis of a photothermal/photoelectronic phase with rhombohedral NiSe and Ni<sub>3</sub>Se<sub>2</sub> (r-NiSe/r-Ni<sub>3</sub>Se<sub>2</sub>) as a precursor. The strategy drives an in situ phase transition of r-NiSe to hexagonal NiSe (h-NiSe), along with the generation of orthorhombic SnSe (o-SnSe), ultimately forming the multifunctional heterostructure o-SnSe/h-NiSe/r-Ni<sub>3</sub>Se<sub>2</sub>. Theoretical calculations reveal that h-NiSe lowers the urea oxidation reaction (UOR) energy barrier relative to r-NiSe (0.745 eV vs. 0.901 eV), while the o-SnSe enhances both light harvesting and photothermal/photoelectronic functionalities of the o-SnSe/h-NiSe/r-Ni<sub>3</sub>Se<sub>2</sub>. Unlike traditional UOR electrocatalysts, its photothermal effect promotes urea adsorption, offsets the endothermic enthalpy of UOR, and accelerates electron/mass-transfer kinetics. Concurrently, the photoelectronic effect enhances the charge-carrier density from 1.4 × 10<sup>24</sup> to 4.2 × 10<sup>24</sup> cm<sup>-3</sup>, lowers the UOR activation energy from 48.4 to 9.7 kJ mol<sup>-1</sup>. Capitalizing on these synergistic advantages, the o-SnSe/h-NiSe/r-Ni<sub>3</sub>Se<sub>2</sub> delivers exceptional UOR activity, achieving 10, 500, and 1000 mA cm<sup>-2</sup> at merely 1.28, 1.34, and 1.37 V, respectively. When implemented in a urea-assisted water splitting electrolyzer, the o-SnSe/h-NiSe/r-Ni<sub>3</sub>Se<sub>2</sub>||o-SnSe/h-NiSe/r-Ni<sub>3</sub>Se<sub>2</sub> device requires only 1.34 and 1.79 V to sustain 100 and 500 mA cm<sup>-2</sup>, respectively, outperforming the conventional HER||OER electrolyzer (1.61 and 1.99 V).