Wide Bandgap Lanthanide Oxybromides High-κ Dielectrics for High-Performance Two-Dimensional Electronics.
basic_science · Level V
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- Record sourced from PubMed, PMID 41855141.
- Also identified by DOI 10.1002/adma.202519042.
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Abstract
High-κ single-crystal dielectrics serve as fundamental components in next-generation 2D electronics. However, the inevitable high leakage current caused by Schottky emission, which stems from the absence of a sufficiently wide bandgap in high-κ dielectrics, limits device performance. Here, we show that 2D lanthanide oxybromides (LnOBr, Ln = La, Ce, Nd, Sm, Eu, Gd, Ho, and Er) synthesized by the chemical vapor deposition method exhibit a wide bandgap (>5.7 eV), tunable thickness, and feature of high-quality single crystal. Meanwhile, 2D LaOBr single crystal displays high dielectric constant (14.8), low leakage current density (<10<sup>-6</sup> A cm<sup>-2</sup>), and high breakdown field strength (14.2 MV cm<sup>-1</sup>), suggesting good insulating property. As a result, the LaOBr top-gate MoS<sub>2</sub> transistors demonstrate competitive electrical performances, including a negligible hysteresis (0.72 mV/(MV cm<sup>-1</sup>)), high on/off ratio (10<sup>7</sup>), near-Boltzmann-limit subthreshold swing (63 mV dec<sup>-1</sup>), excellent electrical reliability and thermal stability (up to 450 K). Accordingly, the well-performed inverter is integrated, with a steep voltage transition and high gain. This work develops abundant dielectric materials with a wide bandgap and a high dielectric constant for innovative high-performance 2D electronics.