Medium-scale integrated circuits based on p-type 2D semiconducting MoTe₂.

Abstract

Two-dimensional (2D) semiconductors hold promise for next-generation electronics, yet the lack of scalable p-type counterparts remains a major bottleneck, with prior studies largely limited to discrete devices or simple circuits. Here we report the realization of medium-scale integrated circuits (MSICs) based on wafer-scale p-type 2D semiconductors, enabled by the controlled synthesis of uniform 4-inch 2H-MoTe₂ films. A precursor-engineering strategy that integrates thickness-tunable Mo precursors with a sustained-release chalcogen supply enables deterministic thickness control and wafer-scale uniformity. The resulting p-type transistors exhibit highly reproducible characteristics, including on/off ratios of ~10⁵ and mobilities of ~7 cm² V^-1 s^-1under low operating voltages. Leveraging a device density exceeding 1300 cm^-2, we demonstrate a 140-transistor full adder, showing the potential of our approach towards the realization of future large-scale 2D complementary metal-oxide-semiconductor (CMOS) circuits.