Proximity Magnetism in Mn(Bi,Sb)<sub>2</sub>Te<sub>4</sub>-(Bi,Sb)<sub>2</sub>Te<sub>3</sub>/MnTe Natural Heterostructures.

Vail, Owen A; Wang, Shu-Wei; Hou, Yasen; Hettiarachchi, Dinura; Milette, Jean-Félix; Eldred, Tim B; Gao, Wenpei; Sarney, Wendy L et al. · ACS Nano · 2026

basic_science · Level V

Where this comes from

Abstract

Magnetic topological insulators and their heterostructures provide significant opportunities to couple band topology with a nontrivial spin configuration for enhanced spintronic device performance, as well as designing magnetoelectric systems and functionalities. We find that Mn interdiffusion from MnTe when interfaced with (Bi,Sb)<sub>2</sub>Te<sub>3</sub> stabilizes as self-organized Mn(Bi,Sb)<sub>2</sub>Te<sub>4</sub> septuple lamellae among alternating (Bi,Sb)<sub>2</sub>Te<sub>3</sub> quintuple layers, as observed using scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. We further demonstrate a valuable combination of magnetic and topological orders in these naturally formed Mn(Bi,Sb)<sub>2</sub>Te<sub>4</sub>-(Bi,Sb)<sub>2</sub>Te<sub>3</sub> heterostructures, which are exchange-coupled with MnTe. Magnetotransport experiments and quantum magnetism simulations reveal that, above its own Néel temperature <i>T</i><sub>N</sub> ∼ 20 K, Mn(Bi,Sb)<sub>2</sub>Te<sub>4</sub> mediates the exchange field leading to an anomalous Hall effect at the (Bi,Sb)<sub>2</sub>Te<sub>3</sub>/MnTe interface, with an enhanced interfacial <i>T</i><sub>N</sub> exceeding 200 K, approaching that of the bulk MnTe. This magnetic interface, in turn, allows a robust and deterministic spin-orbit torque switching without an external magnetic field at a low critical current density of 3 × 10<sup>5</sup> A cm<sup>-2</sup>. The antiferromagnetically coupled architecture of Mn(Bi,Sb)<sub>2</sub>Te<sub>4</sub>-(Bi,Sb)<sub>2</sub>Te<sub>3</sub>/MnTe, featuring magnetic and topological proximity effects across a chalcogenide backbone, is rich in fundamental interface physics and holds the potential for practical applications in spintronics.