High-temperature memristors enabled by interfacial engineering.
basic_science · Level V
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- Record sourced from PubMed, PMID 41886537.
- Also identified by DOI 10.1126/science.aeb9934.
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Abstract
Non-volatile memories (NVM) that operate reliably at high temperature are essential for electronics in extreme environments. Here, we reported graphene (Gra)/HfO<sub>x</sub>/tungsten (W) memristors that operated reliably up to 700 °C with an ON/OFF current ratio >10<sup>3</sup>, data retention >50 hours and endurance >10<sup>9</sup> switching cycles. Transmission electron microscopy (TEM) revealed significant W diffusion into the inert platinum (Pt) electrode of conventional Pt/HfO<sub>x</sub>/W memristors after high-temperature annealing, which was an effect responsible for the thermal failure of conventional devices but not observed in Gra/HfO<sub>X</sub>/W devices. First-principles calculations attributed the enhanced thermal stability to weaker W adsorption and higher surface diffusion barriers on graphene than metals like Pt. These results underscore the critical role of interfacial engineering and potential of 2D materials in enabling reliable high-temperature NVM technologies.