Endowing an Intrinsic High-Capacity Primary Thin-Film Cathode With Cyclability.

Cao, Sheng; Yu, Yongkun; Wang, Hanxiao; Zhou, Cheng; Dong, Chenxu; Yan, Kaijian; Jiang, Linbing; Guo, Chengzhuo et al. · Adv Mater · 2026

basic_science · Level V

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Abstract

The rapid development of the Internet of Things (IoT) urgently demands high-performance and process-compatible integrated micro-power sources. All-solid-state thin-film batteries (ATFBs), which combine an all-solid-state architecture with on-chip integration capability, are regarded as an ideal on-chip power solution. However, their practical application is constrained by the low capacity of conventional cathode materials and the high-temperature annealing process (>500°C) required for crystallization, which is incompatible with temperature-sensitive integration processes. This study presents an annealing-free Ag<sub>2</sub>O/V<sub>2</sub>O<sub>5</sub> composite thin-film cathode, fabricated at room temperature by magnetron co-sputtering, in which the nanoconfinement effect of the amorphous V<sub>2</sub>O<sub>5</sub> matrix effectively suppresses Ag<sub>2</sub>O particle agglomeration to endow the electrode with satisfactory cycling stability. The composite thin-film cathode demonstrates excellent lithium storage performance, delivering an initial discharge capacity as high as 171.0 µAh cm<sup>-2</sup> µm<sup>-1</sup> (406.5 µWh cm<sup>-2</sup> µm<sup>-1</sup>), which is approximately 2-3 times that of LiCoO<sub>2</sub>, while maintaining 73% capacity retention after 1000 cycles. When integrated into ATFBs, this cathode achieves 71% retention over 400 cycles and can successfully power an LED sensor and a motion sensor. This work provides a new pathway to overcome the challenges of energy density and process compatibility in microelectronic applications.