A thousand-state optoelectronic memory for high-precision spatiotemporal encoding.
basic_science · Level V
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- Record sourced from PubMed, PMID 41968130.
- Also identified by DOI 10.1038/s41467-026-71504-x.
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Abstract
Conventional photodiodes can distinguish subtle illumination variations, but fail to retain information. Conversely, optoelectronic memories can store light information but encounter difficulties in multiple-state storage due to noise from the deexcitation recombination of the photogenerated carriers. Here we develop an optoelectronic memory that can generate a multilevel response to light stimuli and retain the multi-states in a nonvolatile manner. In the designed type-III heterojunction device, electrons flow from high-Fermi-level (E<sub>f</sub>) p-type amorphous carbon to low-E<sub>f</sub> n-type TiO<sub>x</sub>, generating an unusual built-in electric field that enhances majority carrier transport. Photogenerated electrons from the oxygen vacancies in TiO<sub>x</sub> quickly combine with holes from amorphous carbon, effectively reducing deexcitation recombination with charged vacancies and associated noise. The resulting device achieves 1,024 distinguishable optoelectronic memory states without any denoising process, enabling high-precision spatiotemporal information encoding. The thousands of states in optoelectronic memory allows for the emulation raptor vision to perception fast-moving objects.