Wavelength-Dependent Electrical Readout of Spin Ensembles in a Thin-Film SiC-on-Insulator Platform.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 42007958.
- Also identified by DOI 10.1021/acs.nanolett.5c05971 and PMC identifier 13154344.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
We report electrical spin-state readout and coherent control of an ensemble (∼540) of silicon vacancies (V<sub>Si</sub><sup>-</sup>) in a silicon carbide-on-insulator (SiCOI) platform, with excitation wavelengths from 780 to 990 nm, demonstrating for the first time spin-state readout well beyond the zero phonon line of the V2 V<sub>Si</sub><sup>-</sup>. By implementing photoelectrical detection of magnetic resonance in thin-film SiCOI, we merge a scalable spin readout technique requiring no collection optics, together with a promising platform for future scalable and CMOS-compatible integrated photonics. Furthermore, we provide a comparison of optical and electrical readout between bulk silicon carbide (SiC) and thin-film SiCOI, revealing that our thin-film processing has a measured <i>T</i><sub>2</sub> coherence time of ≈7 μs, similar to that in the bulk SiC. These results extend the capabilities of SiCOI toward electronic and spin-based devices for scalable quantum technologies over a wide range of excitation wavelengths.