Ultrafast Nonvolatile Graphene Memory Enabled by InP@ZnS Core-Shell Quantum Dots.
basic_science · Level V
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- Record sourced from PubMed, PMID 42011058.
- Also identified by DOI 10.1021/acs.nanolett.6c00760.
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Abstract
Nonvolatile memories (NVMs) with submicrosecond program/erase (P/E) speeds are highly desirable for data-centric and in-memory computing, yet conventional floating-gate architectures are fundamentally limited by high tunneling barriers in wide-bandgap dielectrics. Here, we report graphene memories using solution-processed InP@ZnS core-shell quantum dots as charge-storage centers at the graphene interface. The devices exhibit large memory windows, ambipolar storage, reliable switching with 150 ns gate pulses, extrapolated ten-year retention, and endurance over 10<sup>5</sup> program/erase cycles. Comparisons with Au@SiO<sub>2</sub> core-shell quantum dots, bare InP dots, and a PMMA spacer show that the ZnS shell markedly enhances charge injection. Time-resolved measurements and Fowler-Nordheim analysis reveal an earlier transition to Fowler-Nordheim tunneling in InP@ZnS devices. These results establish shell-bandgap engineering as a practical route to ultrafast, low-power nonvolatile memories.