Sliding Ferroelectricity in MoS₂/ReS₂ Heterojunction for a Sensitive and Reconfigurable Bioelectronic Interface.

Abstract

Two-dimensional (2D) sliding ferroelectrics promise an ultrathin, fatigue-free platform for reconfigurable electronics, but their development has been hindered by a strict requirement for lattice matching, which limits the material choice and functionality. Here, we overcome this limitation by demonstrating room-temperature sliding ferroelectricity in a lattice-mismatched semiconducting MoS₂/ReS₂ heterobilayer. This van der Waals semiconductor displays robust switchable resistive states with submicrosecond dynamics and an endurance exceeding 10⁵ cycles. Building on these properties, we developed a ferroelectric field-effect transistor-based biosensor (bio-FeFET) for label-free detection of 8-hydroxy-2'-deoxyguanosine (8-OHdG), a key biomarker for oxidative DNA damage. The polarization-induced field enhances electrostatic enrichment of negatively charged aptamers, achieving high sensitivity and an ultralow limit of detection (LoD). Importantly, polarization reversal enables a reconfigurable "write-read-erase" operation, thereby allowing the electrical regeneration of the sensing interface without chemical treatment. These findings not only broaden the material horizon for sliding ferroelectrics but also support the development of high-sensitivity, reconfigurable bioelectronic interfaces for logic-integrated sensing.