Direct Observation of Two-Dimensional Electron Gas with Low Effective Mass in Atomically Thin InTe.
basic_science · Level V
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- Record sourced from PubMed, PMID 42113678.
- Also identified by DOI 10.1021/acs.nanolett.6c00793.
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Abstract
Atomically thin InTe, a III-VI analogue of InSe, has recently emerged as a promising two-dimensional semiconductor for nanoelectronics, yet the nature of its two-dimensional electron gas (2DEG) has remained experimentally elusive. Here, using scanning tunneling microscopy (STM) combined with quasiparticle interference (QPI) imaging, we present direct evidence of the existence of a 2DEG in monolayer and bilayer InTe. Bias-dependent standing-wave patterns reveal a parabolic conduction-band dispersion in both thicknesses. Quantitative analysis yields a low electron effective mass of 0.241<i>m</i><sub>e</sub> in monolayer InTe, smaller than that of monolayer InSe/BLG (∼0.27<i>m</i><sub>e</sub>). In bilayer InTe, interlayer coupling lifts the conduction-band-edge degeneracy, and produces two subbands with effective masses of 0.197<i>m</i><sub>e</sub> and 0.802<i>m</i><sub>e</sub>. Density functional theory calculations are in good agreement with the experimental observations. These results establish atomically thin InTe as a promising platform for low-dimensional electronic physics and nanoelectronic applications.