Room temperature molding of amorphous dielectrics via van der Waals anisotropy at the nanoscale.

Liu, Yifeng; Huang, Zhengjie; Li, Xinyan; Lin, Chen-Yang; Chugh, Aryan; Lang, Tian; Watanabe, Kenji; Taniguchi, Takashi et al. · Nat Commun · 2026

basic_science · Level V

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Abstract

Mechanical instabilities produce periodic out-of-plane deformations, but applications remain limited by the need for elastic substrates and weak controllability. Here, we induce coherent, instability-driven buckling in both van der Waals (vdW) layers and underlying amorphous silica at room temperature, achieving precise spatial control and deterministic orientation. Electron-beam builds crystal-axis-dependent stress in α-MoO<sub>3</sub>, while simultaneously facilitating viscous flow in silica, producing sinusoidal wrinkles at subwavelength whose dimension are tunable by α-MoO<sub>3</sub> thickness and electron dose. These wrinkles diffract light as on-chip optical gratings. We show coherent buckling across vdW heterostructures and peel off α-MoO<sub>3</sub> post-buckling, leaving imprinted silica. Similar crystal-aligned wrinkles appear on amorphous Al<sub>2</sub>O<sub>3</sub> and SiN<sub>x</sub>. By removing reliance on elastic substrates, this work extends the scope of instability-driven, lithography-free subwavelength patterning to CMOS-relevant dielectrics.