Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing.
basic_science · Level V
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- Record sourced from PubMed, PMID 42168195.
- Also identified by DOI 10.1038/s41467-026-72103-6.
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Abstract
In-memory computing using two-terminal memristors offers a promising route to reduce the energy demands of data-intensive computing. However, current devices scale poorly due to sneak currents and materials that are incompatible with standard complementary metal-oxide-semiconductor and very large-scale integration processes. Here we demonstrate a self-rectifying memristor that unifies resistive switching and diode-like rectification in a single device, a hybrid ferroelectric-ionic tunnel diode fabricated using complementary metal-oxide-semiconductor compatible materials and processes. We harness the collective (ferroelectric-antiferroelectric polymorphism) and defective (ionic) switching behaviors of HfO<sub>2</sub> - ZrO<sub>2</sub> to synergistically enhance both its electroresistance and rectifying behavior. Furthermore, conformal atomic layer deposition enables the integration of three-dimensional device structures, yielding high on/off (9.3 × 10<sup>7</sup>) and rectifying (1.7 × 10<sup>6</sup>) ratios with a storage capacity of 10 Gb. These results highlight the potential of this device as a hardware building block for scalable in-memory computing platforms.