Achieving Charge Balance in Red InP-Based QLEDs through a Novel ZnO@hydroxides Electron Transport Layer.
basic_science · Level V
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- Record sourced from PubMed, PMID 42171645.
- Also identified by DOI 10.1021/acs.nanolett.6c01079.
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Abstract
Environmentally friendly InP-based quantum dot light-emitting diodes (QLEDs) are promising for next-generation displays but are hindered by charge imbalance and exciton quenching from conventional ZnMgO electron transport layers (ETLs). To address this, we developed a novel ZnO@hydroxides ETL via a simple sol-gel method. The surface-associated hydroxide species, including LiOH·H<sub>2</sub>O and Mg(OH)<sub><i>x</i></sub>, form a passivating layer on the ZnO nanocrystals. This leads to a more compact film, reduced surface defects, and better-matched charge injection. Consequently, the optimized red InP/ZnSe/ZnSe<sub>0.75</sub>S<sub>0.25</sub>/ZnS QLED achieves a high external quantum efficiency (EQE) of 26.42%, significantly outperforming the ZnMgO-based device (EQE = 18.59%). Operational stability is also markedly improved, with the T<sub>95</sub>@100 cd·m<sup>-2</sup> lifetime extending from 3,316 to 7,548 h─a greater than 2-fold enhancement. This work demonstrates that rational ETL surface passivation is a highly effective strategy for developing high-efficiency, stable, and cadmium/plumbum-free QLEDs.