Electric field-induced ferromagnetic domain change by ferroelectric topological domain switching in Co-substituted BiFeO<sub>3</sub> nanodots.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 42308290.
- Also identified by DOI 10.1126/sciadv.aec2861 and PMC identifier 13274586.
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Abstract
Electric field-induced magnetization reversal accompanying polarization switching is promising for low-power consumption, nonvolatile, voltage-write, magnetic-read memory applications. Perovskite BiFe<sub>0.9</sub>Co<sub>0.1</sub>O<sub>3</sub> is a room-temperature multiferroic material in which both ferroelectric and weakly ferromagnetic orders coexist, with spontaneous magnetization coupled to the ferroelectric polarization. Here, we report electric field-induced ferroelectric and ferromagnetic domain changes in BiFe<sub>0.9</sub>Co<sub>0.1</sub>O<sub>3</sub> nanodots using a combination of piezoresponse microscopy and scanning nitrogen-vacancy center magnetometry assisted by image analysis techniques to directly observe both ferroic orders on the nanometer scale. The complex ferroelectric domains present in a 190-nanometer structure which can be switched from a net-down to a net-up polarization by scanning with a biased cantilever, accompanied by reversal of both in-plane and out-of-plane components of the magnetization. This directly demonstrates electric field-induced magnetization reversal accompanying 180° polarization switching in a complex structure of a scale relevant to the semiconductor industry, creating a potential path for next generation memory devices.