All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths.
basic_science · Level V
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- Record sourced from PubMed, PMID 42315831.
- Also identified by DOI 10.1038/s41467-026-74555-2.
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Abstract
Two-dimensional (2D) materials are promising candidates for next-generation nanoelectronics in the post-Moore era. However, simultaneously scaling the channel length (L<sub>ch</sub>) and contact length (L<sub>c</sub>) in transition metal dichalcogenide-based field-effect transistors remains a challenge. Here, we introduce an all-2D vertical metal-semiconductor field-effect transistor featuring an MoS<sub>2</sub> channel that contacts the sidewall of a graphene (source)-hBN (insulator)-graphene (drain)-hBN (insulator) heterostructure. A self-aligned TiS<sub>2</sub>-MoS<sub>2</sub> Schottky junction ensures full-gate control over the channel. The L<sub>ch</sub> and L<sub>c</sub> are determined by the thicknesses of the bottom hBN and the graphene electrodes, respectively. Consequently, the L<sub>ch</sub> and L<sub>c</sub> can be simultaneously scaled to sub-10 nm with a vertical pitch size of sub-30 nm. The typical device exhibits an on/off ratio > 10<sup>7</sup> at an operating voltage of ~0.5 V, a subthreshold swing of ~62 mV/Dec, a drain-induced barrier lowering of ~33 mV/V, and an on-state current density of ~144 μA/μm at 1 V. Sentaurus technology computer-aided design simulations further verify the good electrostatic control provided by the full-gate configuration and the bottleneck-free transport within the channel. These results highlight the potential of 2D materials for high-density and low-power integrated circuits.